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     NXP Semiconductors 1PS70SB20 Schottky barrier single diode 1PS70SB20 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 17 December 2012 3 / 9 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 500 mA; T amb = 25 °C - - 550 mV VR = 35 V; T amb = 25 °C - - 100 μA IR reverse current VR = 35 V; pulsed; t p = 300 μs; δ = 0.02 ; T j = 100 °C - - 10 mA Cd diode capacitance VR = 0 V; f = 1 MHz; T amb = 25 °C 60 - 90 pF mbk578 50 550 VF (mV) IF (mA) 0-1 150 250 350 4 103 102 10 1 1 (1) (2) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 1. Forward current as a function of forward voltage; typical values 006aac893 10-2 10-1 1 10 IR (mA) 10-3 VR (V) 0 40 30 10 20 (1) (2) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 2. Reverse current as a function of reverse voltage; typical values |